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| JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SC3243 FEATURES Power dissipation PCM: 0.9 W (Tamb=25) 3. BASE TRANSISTOR (NPN) TO-92MOD 1. EMITTER 2. COLLECTOR Collector current 1 A ICM: Collector-base voltage 60 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) VCE(sat) 123 unless otherwise specified) Test conditions MIN TYP MAX UNIT V V V Ic=10A, IE=0 Ic=2mA, IB=0 IE=10A, IC=0 VCB=50V, IE=0 VEB=4V, IC=0 VCE=4V, IC=100mA IC=500mA, IB=25mA VCE=2V, IC=10mA VCB=10V, IE=0, f=1MHz 60 60 6 0.2 0.2 55 300 0.3 80 25 A A V MHz pF fT Cob CLASSIFICATION OF hFE(1) Rank Range Marking C 55-110 D 90-180 E 150-300 |
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